copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev.1.0 features high ruggedness r ds( on ) (max 0.6 ? )@v gs =10v gate charge (typical 21nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced super - junction technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and especially in low on resistance . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel to - 220f/i - pak mosfet absolute maximum ratings symbol parameter value unit to - 220f to - 251 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 7* a continuous drain current (@t c =100 o c) 4.4* a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 120 mj e ar repetitive avalanche energy (note 1) 8 mj dv/dt peak diode recovery dv/dt (note 3) 24 v/ns p d total power dissipation (@t c =25 o c) 19.8 166.7 w derating factor above 25 o c 0.16 1.33 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220f to - 251 r thjc thermal resistance, junction to case 6.32 0.75 o c/w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 47.56 80.52 o c /w 1/6 *. drain current is limited by junction temperature. bv dss : 600v i d : 7.0a r ds(on) :0.6 ohm 1. gate 2. drain 3. source to - 220f SW7N60K samwin 1 2 3 item sales type marking package packaging 1 sw f 7n60 SW7N60K to - 220f tube 2 sw i 7n60 SW7N60K to - 251 tube order codes to - 251 1 2 3 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev.1.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.62 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 1 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 4 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a 0.5 0.6 ? g fs forward transconductance v ds = 20 v, i d = 3.5a 5 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 561 pf c oss output capacitance 414 c rss reverse transfer capacitance 20 t d(on) turn on delay time v ds =300v, i d =7a, r g =25? (note 4,5) 9 ns tr rising time 28 t d(off) turn off delay time 62 t f fall time 30 q g total gate charge v ds =480v, v gs =10v, i d =7a (note 4,5) 21 nc q gs gate - source charge 3 q gd gate - drain charge 11 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 7 a i sm pulsed source current 28 a v sd diode forward voltage drop. i s =7.0a, v gs =0v 0.8 1.15 v t rr reverse recovery time i s =7.0a, v gs =0v, di f /dt=100a/us 234 ns q rr reverse recovery charge 2.2 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 60mh, i as = 2a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW7N60K samwin 2/6
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev.1.0 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 3/6 SW7N60K samwin fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev.1.0 4/6 SW7N60K samwin fig. 7 . maximum safe operating area(to - 220f) fig. 8 . transient thermal response curve(to - 220f) fig. 9. maximum safe operating area(to - 251) fig. 10. transient thermal response curve(to - 251) fig. 11. c apacitance characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev.1.0 5/6 SW7N60K samwin v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 13 . switching time test circuit & waveform fig. 12. gate charge test circuit & waveform v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge nc 10v fig. 14 . unclamped inductive switching test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev.1.0 SW7N60K samwin fig. 15 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd 6/6
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